Affiliations

• Electrical and Computer Engineering
• Applied Physics

Education Profile

• Ph.D., Electrical Engineering minor in Physics with the highest honor Edison Prize, Georgia Institute of Technology 2015
• M.S., Electrical Engineering, Lehigh University 2011
• B.S., Applied Physics with the highest honor, Huazhong University of Science and Technology, 2008

Research Interests

Professor Li is interested in the ultrawide bandgap and wide bandgap semiconductors including GaN, AlN, Ga2O3, In2O3. He is focused on growth, simulation, fabrication, and characterization of next generation devices and integrated circuits including LED, lasers, high power and high frequency transistors and diodes, and stacked transistor ICs. Professor Li's research has resulted in many pioneering and cutting-edge results widely recognized and awarded by leading organizations and conferences such as IEEE, SPIE, American Association of Crystal Growth, and Edison Innovation Foundation. These devices are expected to become the enabling technologies to revolutionize energy, communication, health, sensing, and many others which are crucial for the sustainable future of human society. Professor Li's research activities are highly interdisciplinary. They involve students and researchers from electrical engineering, applied physics, material science, and other related disciplines. They are supported by state-of-the-art facilities including and not limited to: MOCVD, PLD, ALD, photolithography, e-beam lithography, PL, TEM, XRD, Raman, XPS, SIMS, RBS, supercomputer in his lab and at KAUST.

Selected Publications

• X. H. Li*, et al., “Three-dimensional integrated metal-oxide transistors,” Nature Electronics 7, 768 (2024)
• X. H. Li*, et al., “Etching-free pixel definition in InGaN green micro-LEDs,” Nature Light Science & Application 13, 117 (2024).
• X. H. Li*, et al., “Enhancement-mode Ambipolar Thin-film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors,” ACS Appl. Mater. Interfaces 16, 6088 (2024).
• X. H. Li*, et al., “Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD,” Appl. Phys. Lett. 124, 172107 (2024).
• X. H. Li*, et al., “Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors,” Adv. Mater. 2023, 2211738 (2023).